Paper ID | M.9.2 | ||
Paper Title | Optimizing the Write Fidelity of MRAMs | ||
Authors | Yongjune Kim, Yoocharn Jeon, Cyril Guyot, Western Digital Research, United States; Yuval Cassuto, Technion – Israel Institute of Technology, Israel | ||
Session | M.9: Topics in Coding for Storage and Memories | ||
Presentation | Lecture | ||
Track | Coding for Storage and Memories | ||
Manuscript | Click here to download the manuscript | ||
Virtual Presentation | Click here to watch in the Virtual Symposium | ||
Abstract | Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for large-scale deployment of MRAMs. In this paper, we formulate an optimization problem for maximizing the memory fidelity given energy constraints, and propose a biconvex optimization approach to solve it. The basic idea is to allocate non-uniform write pulses depending on the importance of each bit position. The fidelity measure we consider is minimum mean squared error (MSE), for which we propose an iterative water-filling algorithm. Although the iterative algorithm does not guarantee global optimality, we can choose a proper starting point that decreases the MSE exponentially and guarantees fast convergence. For an 8-bit accessed word, the proposed algorithm reduces the MSE by a factor of 21. |
Plan Ahead
2021 IEEE International Symposium on Information Theory
11-16 July 2021 | Melbourne, Victoria, Australia