Technical Program

Paper Detail

Paper IDM.9.2
Paper Title Optimizing the Write Fidelity of MRAMs
Authors Yongjune Kim, Yoocharn Jeon, Cyril Guyot, Western Digital Research, United States; Yuval Cassuto, Technion – Israel Institute of Technology, Israel
Session M.9: Topics in Coding for Storage and Memories
Presentation Lecture
Track Coding for Storage and Memories
Manuscript  Click here to download the manuscript
Virtual Presentation  Click here to watch in the Virtual Symposium
Abstract Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for large-scale deployment of MRAMs. In this paper, we formulate an optimization problem for maximizing the memory fidelity given energy constraints, and propose a biconvex optimization approach to solve it. The basic idea is to allocate non-uniform write pulses depending on the importance of each bit position. The fidelity measure we consider is minimum mean squared error (MSE), for which we propose an iterative water-filling algorithm. Although the iterative algorithm does not guarantee global optimality, we can choose a proper starting point that decreases the MSE exponentially and guarantees fast convergence. For an 8-bit accessed word, the proposed algorithm reduces the MSE by a factor of 21.

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2021 IEEE International Symposium on Information Theory

11-16 July 2021 | Melbourne, Victoria, Australia

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